- +8618437960706
- دوشنبه تا شنبه: 10:00 - 16:00 / یکشنبه تعطیل است
With the help of custom silicon-carbide wafers, these devices can be manufactured in various configurations. In addition to this, II-VI also produces Silicon Carbide by epitaxial deposition on 150 mm silicon carbide wafers. The company is capable of producing tens of thousands of wafers every week. It also maintains a large complement of high ...
به خواندن ادامه دهیدThis is part of the company's previously announced USD 1 billion investment in SiC over the next 10 years. In April last year, the company expanded its SiC wafer finishing manufacturing footprint in China.. To meet the accelerating global demand for SiC power electronics, II-VI says it will significantly build out its nearly 300,000 square foot …
به خواندن ادامه دهیدII-VI also announced a large-scale investment in SiC. On the 10th, II-VI announced its investment of $1 billion (about KRW 1.16 trillion) in SiC over the next 10 years. The company plans to increase its SiC wafer …
به خواندن ادامه دهیدThe backend SiC wafer processing performed at II-VI's new SiC facility in Fuzhou includes edge grinding, chemical-mechanical polishing (CMP), cleaning and inspection, all performed in Class 100 and 1000 cleanrooms. The facility is part of II-VI's already announced plan to ramp its SiC substrate manufacturing capacity by 5-10 times …
به خواندن ادامه دهیدThese plans include 200mm SiC wafer manufacturing and underline the importance of the massive Chinese market to II-VI. Germany's Infineon has also laid out its intention to increase SiC epitaxial wafer production after signing a two-year contract (including an extension option) with one of the industry's leading SiC epiwafer manufacturers ...
به خواندن ادامه دهیدII‐VI Incorporated (Nasdaq: IIVI), a leader in wide-bandgap semiconductors, today announced that it has qualified its 1200 V silicon carbide MOSFET platform, on its high-quality SiC substrates, to stringent automotive standard requirements and is expanding its relationship with GE by signing a three-year technology access agreement (TAA) with …
به خواندن ادامه دهیدインフィニオンはこれまで、SiCウエハーのWolfspeed（ウルフスピード）やCoherent（コヒレント、II-VI）、レゾナックなどとのをんできた。たに2としたのは、SiCパワーへのなにえるためである。
به خواندن ادامه دهیدFebruary 8, 2023. Coherent Corp. Reports Fiscal 2023 First Quarter Results. November 9, 2022 View Fiscal 2023 Q1 Results. II-VI Changes Name to Coherent and Launches New Brand Identity. September 8, 2022. II-VI Incorporated Reports Q4 and Full-Year Fiscal 2022 Results. August 24, 2022 View Fiscal 2022 Full Year Results.
به خواندن ادامه دهیدII-VI announced in March 2022 that it is accelerating its investment in 150 mm and 200 mm SiC substrate manufacturing with a large-scale factory expansion at its nearly 300,000 square foot factory ...
به خواندن ادامه دهیدNews: Suppliers 6 October 2020. II-VI completes Ascatron and INNOViON acquisitions, and joins SIA. Engineered materials and optoelectronic component maker II-VI Inc of Saxonburg, PA, USA – which manufactures silicon carbide (SiC) substrates – says that Sohail Khan has joined it as executive VP of New Ventures & Wide-Bandgap Electronics Technologies.
به خواندن ادامه دهیدSAXONBURG, Pa – II‐VI Incorporated (Nasdaq: IIVI), a leader in wide-bandgap compound semiconductors, today announced that it closed a multi-year …
به خواندن ادامه دهیدUnited States 375 SAXONBURG BLVD SAXONBURG, PA 16056 UNITED STATES T. +1 888-558-1504 [email protected]
به خواندن ادامه دهیدII-VI Incorporated (Nasdaq: IIVI), a leader in engineered materials and optoelectronic components, today announced a corporate name change to Coherent Corp. (Nasdaq: COHR) and a new brand identity, following the successful completion of II-VI's acquisition of Coherent, Inc., on July 1, 2022. "We chose the name Coherent because it …
به خواندن ادامه دهیدThe recent surge of activity in wide-band-gap semiconductors has arisen from the need for electronic devices capable of operation at high power levels, high temperatures, and caustic environments, and separately, a need for optical materials, especially emitters, which are active in the blue and ultraviolet (UV) wavelengths.
به خواندن ادامه دهیدAbout Us. Coherent empowers market innovators to define the future through breakthrough technologies, from materials to systems. We deliver innovations that resonate with our customers in diversified applications …
به خواندن ادامه دهیدThe deal gives II-VI access to the GE lab's SiC module technology and team of experts to accelerate customer design-in projects. A growing number of applications, such as in electric vehicles, renewable energy, datacenters, industrial motors, and power supplies, are driving the strong demand for SiC-based power electronics, due to their …
به خواندن ادامه دهیدIn addition to SiC substrates, II-VI provides a powerful array of wavelength management solutions and transceivers for the wireless optical access infrastructure. Altogether, II-VI offers a broad ...
به خواندن ادامه دهیدTo meet the market demand in Asia, II-VI established in 2021 a backend processing line for SiC substrates, in over 50,000 sq. ft. of new cleanroom space, at II-VI's Asia Regional Headquarters in ...
به خواندن ادامه دهیدPITTSBURGH, March 07, 2022 (GLOBE NEWSWIRE) -- II‐VI Incorporated (Nasdaq: IIVI), a leader in wide-bandgap semiconductors, today announced that it is …
به خواندن ادامه دهیدFeatures. Highly reliable GE SiC MOSFET devices. Low R DS (on) (3.1 mΩ) (device only) Low stray inductance (1 nH) SiC die qualified to +200 °C. Ultra-low switching losses over entire operating range. Body diode with minimal reverse recovery. Integrated temperature sensing. Dedicated DESAT Pin and Source- Kelvin Pin.
به خواندن ادامه دهیدSilicon Carbide Substrates Capabilities. Coherent manufactures and markets high quality single crystal SiC substrates for use in the wireless infrastructure, RF electronics and power switching industries. We continually make significant investments in research and development that ensure our crystal growth technology and wafer manufacturing ...
به خواندن ادامه دهیدAs announced earlier this month, optical component and materials maker II-VI has licensed Silicon Carbide (SiC) technology from General Electric with a view to move into power devices and modules.
به خواندن ادامه دهیدPennsylvania and Sweden sites to significantly expand 150 mm and 200 mm SiC epitaxial wafer capacity. II‐VI Incorporated (Nasdaq: IIVI), a leader in wide-bandgap …
به خواندن ادامه دهیدPITTSBURGH and SANTA CLARA, CALIF., July 1, 2022 (GLOBE NEWSWIRE) – II‐VI Incorporated (Nasdaq: IIVI) today successfully completed the acquisition of Coherent, Inc. (Nasdaq: COHR), forming a global leader in materials, networking, and lasers. Under the terms of the merger agreement, each share of …
به خواندن ادامه دهیدAdditional Key Properties of II-VI Advanced Materials SiC Substrates (typical values*) Parameter Polytype Dopant Resistivity Orientation FWHM Roughness, Ra** Dislocation density Micropipe density N-type 4H Nitrogen ~0.02 Ohm-cm 4° off-axis < 20 arc-sec <5Å ~ 3·103 cm-2 < 0.1 cm -2 Semi-insulating 4H, 6H Vanadium > 10 11 Ohm-cm On-axis < 25 ...
به خواندن ادامه دهیدThe unique electronic and thermal properties of silicon carbide (SiC) make it ideally suited for advanced high-power and high-frequency …
به خواندن ادامه دهیدSummarily, II-VI is expanding their SiC substrate capabilities in NJ, PA and MS. II-VI's long-term financial commitment combined with Government R&D funding has led to the creation of a world-class, merchant, SiC substrate-manufacturing capability. While Wolfspeed SiC production capability remains the largest, II-VI has made great strides ...
به خواندن ادامه دهیدAs announced earlier this month, optical component and materials maker II-VI has licensed Silicon Carbide (SiC) technology from General Electric with a view to move into power devices and modules. Just like Cree/Wolfspeed and Rohm Group Company (including SiCrystal), the main competitors of II-VI on the SiC wafer market, the new …
به خواندن ادامه دهیدSiC achieves superior efficiency, higher energy density, and lower system-level cost per watt compared with state-of-the-art silicon-based devices. Power electronics based on SiC have demonstrated their potential to have a highly beneficial impact on the environment via significant reductions in carbon dioxide emissions and energy …
به خواندن ادامه دهیدNews: Microelectronics 7 July 2020. II-VI relying on GE's IP to conquer power SiC markets. As announced at the end of June, engineered materials and optoelectronic component maker II-VI Inc of Saxonburg, PA, USA – which manufactures silicon carbide (SiC) substrates – has licensed SiC technology from General Electric with a view to …
به خواندن ادامه دهیدMunich, Germany – 23 August 2022 – Infineon Technologies AG (FSE: IFX / OTCQX: IFNNY) and II-VI Incorporated (Nasdaq: IIVI) have signed a multi-year supply agreement for silicon carbide (SiC) wafers. …
به خواندن ادامه دهید