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به خواندن ادامه دهیدNTHL045N065SC1 onsemi MOSFET Silicon Carbide (SiC) MOSFET - EliteSiC, 32 mohm, 650 V, M2, TO-247-3L datasheet, inventory & pricing.
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به خواندن ادامه دهیدNTHL045N065SC1 onsemi MOSFET Silicon Carbide (SiC) MOSFET - EliteSiC, 32 mohm, 650 V, M2, TO-247-3L datasheet, inventory & pricing. Skip to Main Content +852 3756-4700. Contact Mouser +852 3756-4700 | Feedback. Change Location English NZD $ NZD $ USD New Zealand. Incoterms:DDP
به خواندن ادامه دهیدonsemi NTHL045N065SC1 Silicon Carbide (SiC) MOSFET uses a completely new technology that provides superior switching performance and high reliability compared to Silicon. This compact chip-sized MOSFET is designed with low ON resistance and ensures low capacitance and gate charge. The NTHL045N065SC1 MOSFET features …
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به خواندن ادامه دهیدonsemi NTHL045N065SC1 Silicon Carbide (SiC) MOSFET uses a completely new technology that provides superior switching performance and high reliability compared to Silicon. This compact chip-sized...
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به خواندن ادامه دهیدNTHL045N065SC1 3 Table 2. ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified) (continued) Parameter Symbol Test Condition Min Typ Max Unit DRAIN−SOURCE DIODE CHARACTERISTICS Reverse Recovery Time tRR VGS = −5/18 V, ISD = 25 A, dIS/dt = 1000 A/ s − 19 − ns Reverse Recovery Charge QRR − …
به خواندن ادامه دهیدNTHL045N065SC1 3 Table 2. ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified) (continued) Parameter Symbol Test Condition Min Typ Max Unit DRAIN−SOURCE DIODE CHARACTERISTICS Reverse Recovery Time tRR VGS = −5/18 V, ISD = 25 A, dIS/dt = 1000 A/ s − 19 − ns Reverse Recovery Charge QRR − …
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به خواندن ادامه دهیدSilicon Carbide (SiC) MOSFET - EliteSiC, 33 mohm, 650 V, M2, TO-247-4L
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به خواندن ادامه دهیدDescription SiliconCarbideSiCMOSFET- 32 mohm,650V, M2,TO-247-3L NTHL045N065SC1 Datasheet (HTML) - ON Semiconductor NTHL045N065SC1 Product details Features • …
به خواندن ادامه دهیدNTH4L045N065SC1 3 ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified) (continued) Parameter Symbol Test Condition Min Typ Max …
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به خواندن ادامه دهیدThe NTHL045N065SC1 MOSFET features high efficiency, faster-operating frequency, increased power density, reduced EMI, and reduced system size. Typical applications include Switching Mode Power Supplies (SMPS), solar inverters, DC-DC converters, UPS, and energy storage.
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به خواندن ادامه دهیدNTHL045N065SC1 Silicon Carbide (SiC) MOSFET onsemi NTHL045N065SC1 Silicon Carbide (SiC) MOSFET uses a completely new technology that provides superior switching performance and high reliability compared to Silicon. This compact chip-sized MOSFET is designed with low ON resistance and ensures low capacitance and gate charge.
به خواندن ادامه دهیدThe NTHL045N065SC1 MOSFET features high efficiency, faster-operating frequency, increased power density, reduced EMI, and reduced system size. Typical applications …
به خواندن ادامه دهیدNTHL045N065SC1 onsemi MOSFET Silicon Carbide (SiC) MOSFET - EliteSiC, 32 mohm, 650 V, M2, TO-247-3L datasheet, inventory & pricing. Skip to Main Content +39 02 57506571
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